qs5u12 2.5v drive nch+sbd mosfet datasheet ll outline v dss 30v tsmt5 r ds(on) (max.) 154m i d 2.0a p d 1.25w ll inner circuit ll features 1) the qs5u12 combines nch mosfet with a schottky barrier diode in a single tsmt5 package. 2) low on-state resistance with fast swicthing 3) low voltage drive (2.5v drive). 4) built-in low v f schottky barrier diode. 5) pb-free lead plating ; rohs compliant. ll packaging specifications type packing embossed tape reel size (mm) 180 ll application tape width (mm) 8 load switch, dc/ dc conversion basic ordering unit (pcs) 3000 taping code tr marking u12 ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss 12 v continuous drain current i d 2.0 a pulsed drain current i d, pulse *1 8.0 a continuous source current (body diode) i s 0.8 a pulsed source current (body diode) i s , pulse *1 3.2 a power dissipation p d *3 0.9 w/element junction temperature t j 150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll absolute maximum ratings (t a = 25c) parameter symbol value unit repetitive peak reverse voltage v rm 25 v reverse voltage v r 20 v forward current i f 1.0 a forward current surge peak i fsm *2 3.0 a power dissipation p d *3 0.7 w/element junction temperature t j 150 parameter symbol value unit power dissipation p d *3 1.25 w/total range of storage temperature t stg -55 to +150 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. gate - source leakage current i gss v gs = 12v, v ds = 0v - - 10 a drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 30 - - v zero gate voltage drain current i dss v ds = 30v, v gs = 0v - - 1 a gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 0.5 - 1.5 v static drain - source on - state resistance r ds(on) *4 v gs = 4.5v, i d = 2.0a - 71 100 m v gs = 4v, i d = 2.0a - 76 107 v gs = 2.5v, i d = 2.0a - 110 154 transconductance g fs *4 v ds = 10v, i d = 2.0a 1.5 - - s www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 175 - pf output capacitance c oss v ds = 10v - 50 - reverse transfer capacitance c rss f = 1mhz - 25 - turn - on delay time t d(on) *4 v dd ? 15v, v gs = 4.5v - 8 - ns rise time t r *4 i d = 1.0a - 10 - turn - off delay time t d(off) *4 r l = 15 - 21 - fall time t f *4 r g = 10 - 8 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? 15v, i d = 2.0a v gs = 4.5v - 2.8 3.9 nc gate - source charge q gs *4 - 0.6 - gate - drain charge q gd *4 - 0.8 - ll body diode electirical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. forward voltage v sd *4 v gs = 0v, i s = 3.2a - - 1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. forward voltage v f i f = 1.0a - - 0.45 v reverse current i r v r = 20v - - 200 a *1 pw 10s, duty cycle 1% *2 60hz ? 1 cycle *3 mounted on a ceramic board *4 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristic cur ves fig.1 typical capacitance vs. drain - source voltage fig.2 switching characteristics fig.3 dynamic input characteristics fig.4 typical tr ansfer characteristics www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristic cur ves fig. 5 static drain - source on - state resistance vs. gate source voltage fig.6 source current vs. source drain voltage fig.7 static drain - source on - state resistance vs. drain current (i) fig.8 static drain - source on - state resistance vs. drain current (ii) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristic cur ves fig. 9 static drain - source on - state resistance vs. drain current (iii) fig.10 static drain - source on - state resistance vs. drain current (iv) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll electrical characteristic cur ves fig. 11 f o rward current vs. forward voltage fig.12 reverse current vs. reverse voltage ll notice 1. sbd has a large reverse leak current compared to other type of diode. therefore, it would raise a junction temperature, and increase a revers e power loss. further rise of inside temperature would cause a thermal runaway. this bui lt-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll me asurement circuits fig. 1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/10 20130609 - rev.001 downloaded from: http:///
qs5u12 datasheet ll d i mensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/10 20130609 - rev.001 downloaded from: http:///
downloaded from: http:///
|
